Cite
HARVARD Citation
Fukushima, H. et al. (2019). Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese journal of applied physics. p. . [Online].
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Fukushima, H. et al. (2019). Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese journal of applied physics. p. . [Online].