Effect of modulation of ultrafast transient carrier dynamics by interface on terahertz signal. (May 2019)

• Record Type: Journal Article
• Authors: Yamamoto, Shintaro; Kojima, Osamu; Kita, Takashi
• Is Part Of: Journal of physics. Volume 1220(2019)
• Publication Date: 2019-05
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1220/1/012013
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The carrier dynamics in the nanostructured semiconductors related to the drift and diffusion currents strongly affects the device performance, such as the efficiency of the carrier injection into the active layer. We report on the effects of the photocurrent direction on the THz signals emitted from the GaAs crystal including an interface. The polarity inversion of the signal is caused by the change in photocurrent direction from diffusion to drift. The inversion is not affected by electron lifetimes. These results suggest that measurement of the THz wave is useful to consider the photocurrent direction.