Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal–oxide–semiconductor field-effect transistor. (15th December 2016)

• Record Type: Journal Article
• Authors: Hori, Masahiro; Tsuchiya, Toshiaki; Ono, Yukinori
• Is Part Of: Applied physics express. Volume 10:Number 1(2017)
• Publication Date: 2016-12-15
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.015701
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Charge-pumping electrically detected magnetic resonance (CP EDMR), or EDMR in the CP mode, is improved and applied to a silicon metal–oxide–semiconductor field-effect transistor (MOSFET). Real-time monitoring of the CP process reveals that high-frequency transient currents are an obstacle to signal amplification for EDMR. Therefore, we introduce cutoff circuitry, leading to a detection limit for the number of spins as low as 10 3 for Si MOS interface defects. With this improved method, we demonstrate that CP EDMR inherits one of the most important features of the CP method: the gate control of the energy window of the detectable interface defects for spectroscopy.