Selective-area heteroepitaxial growth of h-BN micropatterns on graphene layers. (17th November 2017)

• Record Type: Journal Article
• Authors: Yun, Jiyoung; Oh, Hongseok; Jo, Janghyun; Hwi Lee, Hyun; Kim, Miyoung; Yi, Gyu-Chul
• Is Part Of: 2D materials. Volume 5:Number 1(2018)
• Publication Date: 2017-11-17
• Subjects: hexagonal boron nitride micropattern -- graphene substrate -- selective area epitaxial growth; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aa97f6
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We report the selective-area heteroepitaxial growth of hexagonal boron nitride ( h -BN) on graphene layers using catalyst-free chemical vapor deposition. For both catalyst-free and selective-area growth, exfoliated graphene layers were irradiated with a focused ion beam to generate nucleation sites on the inert graphene surface. A high-quality, ultrathin h -BN micropattern array was selectively grown only on the patterned region of graphene using borazine, ammonia, and nitrogen without any metal catalyst. The crystal structure and microstructural properties of h- BN grown on graphene were investigated using synchrotron radiation x-ray diffraction and transmission electron microscopy, respectively. The catalyst-free growth mechanism and heteroepitaxial relationship between h- BN and graphene layers are discussed.