Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface. (8th May 2017)

• Record Type: Journal Article
• Authors: Yoon, Ji-Young; Lee, Myung-Hyun; Kim, Younghee; Seo, Won-Seon; Shul, Yong-Gun; Lee, Won-Jae; Jeong, Seong-Min
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 6(2017)
• Publication Date: 2017-05-08
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.065501
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si–C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.