Low-temperature sol–gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage. (9th May 2017)

• Record Type: Journal Article
• Authors: Yu, Shang-Yu; Wang, Kuan-Hsun; Zan, Hsiao-Wen; Soppera, Olivier
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 6(2017)
• Publication Date: 2017-05-09
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.060303
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this article, we propose a solution-processed high-performance amorphous indium–zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3 V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.