Influence of barrier thickness on Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 multiferroic tunnel junctions. Issue 17 (1st December 2017)

• Record Type: Journal Article
• Authors: Barman, Rahul; Kaur, Davinder
• Is Part Of: Ceramics international. Volume 43:Issue 17(2017)
• Page Start: 15654
• Page End: 15658
• Publication Date: 2017-12-01
• Subjects: Thin films -- Multiferroic -- Tunnel junction; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2017.08.122
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Effect of antiferromagnetic barrier layer (BiFeO3 ) thickness on tunneling properties in Ni50.3 Mn36.9 Sb12.8 /BiFeO3 /Ni50.3 Mn36.9 Sb12.8 multiferroic tunnel junction fabricated on Si substrates had been thoroughly investigated. The exchange bias phenomenon is also found to be present with the thickness of barrier layer larger than 10 nm, exhibiting prominent shift in MH loop of Ni50.3 Mn36.9 Sb12.8 /BiFeO3 /Ni50.3 Mn36.9 Sb12.8 trilayer. The value of TEMR ratio increases with increase in barrier layer thickness for thickness below 10 nm and decreases above it. These finding may be helpful towards novel reconfigurable logic spintronics architectures in next generation electrically controlled random access memory devices.