Cite
HARVARD Citation
Han, S. et al. (2019). Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2. Physical chemistry chemical physics. 21 (28), pp. 15302-15309. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Han, S. et al. (2019). Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2. Physical chemistry chemical physics. 21 (28), pp. 15302-15309. [Online].