CuZnInSe3‐based solar cells: Impact of copper concentration on vibrational and structural properties and device performance. (4th June 2019)
- Record Type:
- Journal Article
- Title:
- CuZnInSe3‐based solar cells: Impact of copper concentration on vibrational and structural properties and device performance. (4th June 2019)
- Main Title:
- CuZnInSe3‐based solar cells: Impact of copper concentration on vibrational and structural properties and device performance
- Authors:
- Guc, Maxim
Oliva, Florian
Kondrotas, Rokas
Alcobe, Xavier
Placidi, Marcel
Pistor, Paul
Saucedo, Edgardo
Perez‐Rodriguez, Alejandro
Izquierdo‐Roca, Victor - Abstract:
- Abstract: CuZnInSe3 (CZISe) is an interesting alternative for the acknowledged Cu(In, Ga)Se2 absorber layer in thin film solar cells. While the partial replacement of scarce and expensive indium and gallium by zinc decreases manufacturing costs, the solid solution between CuInSe2 and ZnSe opens interesting options for band gap tuning and grading. Its potential as an absorber layer in photovoltaic devices has been demonstrated by obtaining 7.4 and 7.6 % efficiency in CZISSe‐ and CZISe‐based devices, respectively. On the other hand, the inherent complexity of the quaternary CZISe together with a lack of fundamental insights puts a limit to its current development. We present insights on the influence of the copper content ([Cu]/([Zn] + [In]) ratio) on the structural and optoelectronic properties of CZISe as well as the formation of secondary phases. By means of XRD and Raman scattering analyses, in addition to the sphalerite CZISe structure, a chalcopyrite Cu‐In‐Zn‐Se phase was found for high copper concentrations. On the contrary, for low Cu concentrations, unambiguous indications of a new ordered vacancy compound (OVC)–like phase formation both in XRD patterns and in Raman spectra were found. Conditions of pre‐resonant Raman scattering were applied to emphasize the new found phase and to estimate its concentration. Finally, the influence of each phase on the optoelectronic parameters and performance of solar cells with efficiencies of up to 7.4 % was studied. Abstract :Abstract: CuZnInSe3 (CZISe) is an interesting alternative for the acknowledged Cu(In, Ga)Se2 absorber layer in thin film solar cells. While the partial replacement of scarce and expensive indium and gallium by zinc decreases manufacturing costs, the solid solution between CuInSe2 and ZnSe opens interesting options for band gap tuning and grading. Its potential as an absorber layer in photovoltaic devices has been demonstrated by obtaining 7.4 and 7.6 % efficiency in CZISSe‐ and CZISe‐based devices, respectively. On the other hand, the inherent complexity of the quaternary CZISe together with a lack of fundamental insights puts a limit to its current development. We present insights on the influence of the copper content ([Cu]/([Zn] + [In]) ratio) on the structural and optoelectronic properties of CZISe as well as the formation of secondary phases. By means of XRD and Raman scattering analyses, in addition to the sphalerite CZISe structure, a chalcopyrite Cu‐In‐Zn‐Se phase was found for high copper concentrations. On the contrary, for low Cu concentrations, unambiguous indications of a new ordered vacancy compound (OVC)–like phase formation both in XRD patterns and in Raman spectra were found. Conditions of pre‐resonant Raman scattering were applied to emphasize the new found phase and to estimate its concentration. Finally, the influence of each phase on the optoelectronic parameters and performance of solar cells with efficiencies of up to 7.4 % was studied. Abstract : CuZnInSe3 compounds were studied by means of XRD and Raman scattering analyses. For the high copper concentrations in addition to the sphalerite structure, a chalcopyrite phase was found, while for low Cu concentrations, unambiguous indications of a new ordered vacancy compound (OVC)–like phase formation were found both in XRD patterns and in Raman spectra. The influence of each phase on the optoelectronic parameters and performance of solar cells with efficiencies of up to 7.4% was studied. … (more)
- Is Part Of:
- Progress in photovoltaics. Volume 27:Number 8(2019)
- Journal:
- Progress in photovoltaics
- Issue:
- Volume 27:Number 8(2019)
- Issue Display:
- Volume 27, Issue 8 (2019)
- Year:
- 2019
- Volume:
- 27
- Issue:
- 8
- Issue Sort Value:
- 2019-0027-0008-0000
- Page Start:
- 716
- Page End:
- 723
- Publication Date:
- 2019-06-04
- Subjects:
- CuZnInSe3 -- Raman scattering -- solar cell -- structural polymorphs -- XRD
Solar cells -- Periodicals
Photovoltaic cells -- Periodicals
Solar power plants -- Periodicals
621.31245 - Journal URLs:
- http://onlinelibrary.wiley.com/ ↗
- DOI:
- 10.1002/pip.3150 ↗
- Languages:
- English
- ISSNs:
- 1062-7995
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6873.060000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11167.xml