Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory. Issue 1 (December 2017)

• Record Type: Journal Article
• Authors: Heo, Jin; Shin, Dong; Moon, Sang; Lee, Min; Kim, Do; Oh, Seol; Jo, William; Im, Sang
• Is Part Of: Scientific reports. Volume 7:Issue 1(2017)
• Page Start: 1
• Page End: 8
• Publication Date: 2017-12
• Subjects: Natural history -- Research -- Periodicals; Biology -- Research -- Periodicals; Physical sciences -- Research -- Periodicals; Earth sciences -- Research -- Periodicals; Environmental sciences -- Research -- Periodicals; 502.85
• DOI: 10.1038/s41598-017-16805-4
• Languages: English
• ISSNs: 2045-2322

Abstract

Abstract The crystal grain size of CH3 NH3 PbI3 (MAPbI3 ) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage.