Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3. (9th February 2017)

• Record Type: Journal Article
• Authors: Zhang, Liheng; Verma, Amit; Xing, Huili (Grace); Jena, Debdeep
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 3(2017)
• Publication Date: 2017-02-09
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.030304
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Dry etching behavior of unintentionally-doped β-Ga2 O3 has been studied in a BCl3 /Ar chemistry using inductively-coupled-plasma reactive ion etching (ICP-RIE). The effects of various etch parameters like ICP and RIE powers, BCl3 /Ar gas ratio and chamber pressure on etch rate are studied systematically. Higher ICP, RIE powers and lower pressure conditions are found to enhance the etch rate. A synergic etching mechanism between chemical and physical components is proposed and used to obtain fast Ga2 O3 etch rates more than 160 nm/min, nearly-vertical sidewalls and smooth etched surfaces. The findings of this work will enable Ga2 O3 vertical devices for power electronics.