Thin‐Film Transistors: ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages (Adv. Electron. Mater. 1/2018). (10th January 2018)

• Record Type: Journal Article
• Authors: Wang, Fengyun; Song, Longfei; Zhang, Hongchao; Meng, You; Luo, Linqu; Xi, Yan; Liu, Lei; Han, Ning; Yang, Zaixing; Tang, Jie; Shan, Fukai; Ho, Johnny C.
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 1(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-10
• Subjects: annealing -- electrospinning -- low‐operating voltage -- transistor -- ZnO nanofiber; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201870007
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : High‐performance, low‐power and enhancement‐mode ZnO nanofiber thin‐film transistors with impressive electrical characteristics, such as a small positive threshold voltage of ≈0.9 V, are demonstrated by Fukai Shan, Johnny C. Ho, and co‐workers in article number1700336 . When high‐κ AlO x dielectrics are employed, the device operating voltage can be substantially reduced, with a 10× increase in the electron mobility, indicating the potency of these nanofibers for nextgeneration electronics.