The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering. Issue 1 (December 2017)

• Record Type: Journal Article
• Authors: Wiesner, M.; Trzaskowska, A.; Mroz, B.; Charpentier, S.; Wang, S.; Song, Y.; Lombardi, F.; Lucignano, P.; Benedek, G.; Campi, D.; Bernasconi, M.; Guinea, F.; Tagliacozzo, A.
• Is Part Of: Scientific reports. Volume 7:Issue 1(2017)
• Page Start: 1
• Page End: 12
• Publication Date: 2017-12
• Subjects: Natural history -- Research -- Periodicals; Biology -- Research -- Periodicals; Physical sciences -- Research -- Periodicals; Earth sciences -- Research -- Periodicals; Environmental sciences -- Research -- Periodicals; 502.85
• DOI: 10.1038/s41598-017-16313-5
• Languages: English
• ISSNs: 2045-2322

Abstract

Abstract It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2 Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort ofquantum sonar .