Effect of precursor dopant valence state on the photocatalytic performance of Mo3+- or Mo5+-Doped TiO2 thin films. (March 2019)

• Record Type: Journal Article
• Authors: Cui, Yajing; Chen, Wen-Fan; Bastide, Arnaud; Zhang, Xichao; Koshy, Pramod; Sorrell, Charles Christopher
• Is Part Of: Journal of physics and chemistry of solids. Volume 126(2019)
• Page Start: 314
• Page End: 321
• Publication Date: 2019-03
• Subjects: Titania -- Anatase -- Thin film -- Photocatalysis -- Dopant valence; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2018.11.018
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: Mo 3+ - or Mo 5+ -doped TiO2 sol-gel thin films (≤0.100 mol%) were spin coated on fused silica glass substrates and annealed at 450 °C for 2 h. The effect of the valence of the dopant precursor is significant to the nanostructural development and resultant properties. Mo 3+ or Mo 5+ doping yields converse trends with doping level, thus reflecting the competing influences of lattice distortion and destabilization (dominating Mo 3+ doping) and nucleation and recrystallization (dominating Mo 5+ doping). Mo doping results in oxidation of Mo 3+ and reduction of Mo 5+, both of which alter to Mo (5−x)+, as well as oxidation of Ti 3+ to Ti (4+x)+ ; all of these result in V O annihilation. Although the absorption edges were largely indistinguishable, Mo 3+ doping causes a red shift and Mo 5+ doping causes a blue shift. These data suggest that the performances are controlled by the synergistic effects of crystallinity, surface area, and band gap, with the latter's exhibiting the dominant effect. This suggests that the defect structure governs the photocatalytic performance but also that the defect chemistry at these low annealing temperatures is indicative of nonequilibrium conditions, thereby explaining the significance of the dopant valence. Highlights: The dominant effects are lattice distortion (Mo 3+ ) and recrystallization (Mo 5+ ). Charge transfer causes Mo 3+ and Ti 3+ oxidation, Mo 5+ reduction and V O removal. Synergistic effect of crystallinity, surface area, and band gap improved efficiency.