Tuning magnetic properties for domain wall pinning via localized metal diffusion. Issue 1 (December 2017)

• Record Type: Journal Article
• Authors: Jin, T.; Ranjbar, M.; He, S.; Law, W.; Zhou, T.; Lew, W.; Liu, X.; Piramanayagam, S.
• Is Part Of: Scientific reports. Volume 7:Issue 1(2017)
• Page Start: 1
• Page End: 9
• Publication Date: 2017-12
• Subjects: Natural history -- Research -- Periodicals; Biology -- Research -- Periodicals; Physical sciences -- Research -- Periodicals; Earth sciences -- Research -- Periodicals; Environmental sciences -- Research -- Periodicals; 502.85
• DOI: 10.1038/s41598-017-16335-z
• Languages: English
• ISSNs: 2045-2322

Abstract

Abstract Precise control of domain wall displacement in nanowires is essential for application in domain wall based memory and logic devices. Currently, domain walls are pinned by creating topographical notches fabricated by lithography. In this paper, we propose localized diffusion of non-magnetic metal into ferromagnetic nanowires by annealing induced mixing as a non-topographical approach to form pinning sites. As a first step to prove this new approach, magnetodynamic properties of permalloy (Ni80 Fe20 ) films coated with different capping layers such as Ta, Cr, Cu and Ru were investigated. Ferromagnetic resonance (FMR), and anisotropy magnetoresistance (AMR) measurements were carried out after annealing the samples at different temperatures (T an ). The saturation magnetization of Ni80 Fe20 film decreased, and damping constant increased withT an . X-Ray photoelectron spectroscopy results confirmed increased diffusion of Cr into the middle of Ni80 Fe20 layers withT an . The resistance vs magnetic field measurements on nanowires showed intriguing results.