Linearly polarized pumped passively Q-switched Nd:YVO4 microchip laser for Ince–Gaussian laser modes with controllable orientations. (15th November 2016)

• Record Type: Journal Article
• Authors: He, Hong-Sen; Zhang, Ming-Ming; Dong, Jun; Ueda, Ken-Ichi
• Is Part Of: Journal of optics. Volume 18:Number 12(2016:Dec.)
• Publication Date: 2016-11-15
• Subjects: Ince–Gaussian modes -- beam characteristics -- microchip laser -- passively Q-switched -- solid-state lasers -- linearly polarized pumping; 42.55.Xi -- 42.60.Gd -- 42.60.Jf; Optics -- Periodicals; 535.05
• DOI: 10.1088/2040-8978/18/12/125202
• Languages: English
• ISSNs: 2040-8978

Abstract

Abstract: A tilted, linearly polarized laser diode end-pumped Cr 4+ :YAG passively Q-switched a-cut Nd:YVO4 microchip laser for generating numerous Ince–Gaussian (IG) laser modes with controllable orientations has been demonstrated by selecting the crystalline orientation of an a-cut Nd:YVO4 crystal. The same IG laser mode with different orientations has been achieved with the same absorbed pump power in a passively Q-switched Nd:YVO4 microchip laser under linearly polarized pumping when the incident pump power and the crystalline orientation of an a-cut Nd:YVO4 crystal are both properly selected. The significant improvement of pulsed laser performance of controllable IG modes has been achieved by selecting the crystalline orientation of an a-cut Nd:YVO4 crystal. The maximum pulse energy is obtained along the a-axis of an a-cut Nd:YVO4 crystal and the highest peak power is achieved along the c -axis of an a-cut Nd:YVO4 crystal, respectively, which has potential applications on quantum computation and optical manipulation. The generation of controllable IG laser modes in microchip lasers under linearly polarized pumping provides a convenient and universal way to control IG laser mode numbers with anisotropic crystal as a gain medium.