Cite
HARVARD Citation
Zhang, X. et al. (2018). Emitter ballasting resistor design of InGaP/GaAs power HBT for high linearity based on Volterra Series distortion analysis. Microelectronics journal. pp. 28-32. [Online].
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Zhang, X. et al. (2018). Emitter ballasting resistor design of InGaP/GaAs power HBT for high linearity based on Volterra Series distortion analysis. Microelectronics journal. pp. 28-32. [Online].