Cite
HARVARD Citation
Sharma, N. et al. (2017). Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin films. Journal of physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Sharma, N. et al. (2017). Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin films. Journal of physics. p. . [Online].