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HARVARD Citation
Lim, C. et al. (n.d.). Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. Semiconductor science and technology. p. . [Online].
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Lim, C. et al. (n.d.). Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. Semiconductor science and technology. p. . [Online].