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HARVARD Citation
Prando, G. et al. (n.d.). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor science and technology. p. . [Online].
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Prando, G. et al. (n.d.). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor science and technology. p. . [Online].