Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor. Issue 1693 (14th July 2014)

• Record Type: Journal Article
• Authors: Vervisch, Vanessa; Issa, Fatima; Biondo, Stéphane; Ottaviani, Laurent; Vervisch, Wilfried; Szalkai, Dora; Vermeeren, Ludo; Klix, Axel; Hallen, Anders; Kuznetsov, Andrej; Lazar, Mihai; Lyoussi, Abdallah
• Is Part Of: MRS proceedings. Issue 1693:(2014)
• Publication Date: 2014-07-14
• Subjects: electrical properties, -- devices, -- neutron irradiation; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.691
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.