Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires. (4th December 2018)

• Record Type: Journal Article
• Authors: Rigby, Oliver M; Stamp, Alice V; Hindmarsh, Steve A; Alonso-Orts, Manuel; Nogales, Emilio; Méndez, Bianchi; Sanchez, Ana M
• Is Part Of: Nanotechnology. Volume 30:Number 5(2019)
• Publication Date: 2018-12-04
• Subjects: wide band gap oxides -- transmission electron microscopy -- tunnelled intergrowth -- cathodoluminescence; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aaefc4
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: β -Ga2 O3 intergrowths have been revealed in the SnO2 rutile structure when SnO2 /Ga2 O3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga2 O3 nanowire trunk, around which a rutile SnO2 particle is formed with [001] aligned to the [010] Ga2 O3 trunk axis. Inside the SnO2 particle, β -Ga2 O3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this β -Ga2 O3 intergrowth.