Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 µm broadband amplifier. (20th December 2016)

• Record Type: Journal Article
• Authors: Frolov, M P; Gordienko, V M; Korostelin, Yu V; Kozlovsky, V I; Podmar'kov, Yu P; Potemkin, F V; Skasyrsky, Ya K
• Is Part Of: Laser physics letters. Volume 14:Number 2(2017:Feb.)
• Publication Date: 2016-12-20
• Subjects: Fe2+:CdSe -- solid-state lasers -- mid-IR; Lasers -- Periodicals; Physics -- Periodicals; 621.366
• DOI: 10.1088/1612-202X/aa5130
• Languages: English
• ISSNs: 1612-2011

Abstract

Abstract: We report on the successful growth of single crystals of Fe 2+ :CdSe by seeded physical vapor transport (SPVT) technique with doping within the growing process and subsequent annealing in Se vapor. Luminescence lifetime measurements, spectroscopic studies of 5 E– 5 T2 transition of Fe 2+ in CdSe, and laser experiments were performed. The lifetime of the 5 T2 energy level was measured to be 20 ± 5 ns at a room temperature (RT) of 290 K. At liquid nitrogen (LN) temperature, luminescence kinetics displayed a non-exponential decay, which can be fitted to a bi-exponential function with time constants τ 1 = 6 µ s and τ 2 = 29 µ s. As much as 3.2 mJ of output energy at 5.2 µ m with 27% absorbed pump energy slope efficiency of an Fe 2+ :CdSe laser was achieved at RT under 2.94 µ m nanosecond Er:YAG laser pumping. The Fe 2+ :CdSe laser was tuned from 4.63 to 6.10 µ m. Obtained characteristics of Fe 2+ :CdSe indicate that the crystal can be considered a promising medium for amplification of femtosecond pulses in the middle infrared range up to 6 µ m.