Cite
HARVARD Citation
Iwinska, M. et al. (2017). Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds. Applied physics express. p. . [Online].
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Iwinska, M. et al. (2017). Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds. Applied physics express. p. . [Online].