Investigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures. (January 2019)

• Record Type: Journal Article
• Authors: Vasil'evskii, I; Vinichenko, A; Strikhanov, M; Kargin, N; Kuech, T; Rogacki, K; Bolshakova, I; Kost, Ya; Moroz, A; Shurygin, F; Vasyliev, A; Radishevskiy, M
• Is Part Of: IOP conference series. Volume 475(2019)
• Publication Date: 2019-01
• Subjects: Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/475/1/012015
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: Influence of strong magnetic fields B ˃ 3 T under cryogenic temperatures (1.5 ÷ 4.2) K on the signals of Hall sensors based on single-crystal whiskers (InSb, InAs) and nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) have been investigated. There are distinct Shubnikov – de Haas oscillations for whisker-based sensors, whereas heterostructures-based sensors demonstrate the linear field dependence of the output signal. This difference explained by the higher concentration of structure defects in the heterostructures. The derived results confirm the operability of Hall sensors based on indicated heterostructures for the magnetic fields diagnostics in the temperature and field conditions of modern particle accelerators and fusion reactors.