Cite
HARVARD Citation
Fuchs, F. et al. (2019). Electron transport through NiSi2–Si contacts and their role in reconfigurable field-effect transistors. Journal of physics. p. . [Online].
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Fuchs, F. et al. (2019). Electron transport through NiSi2–Si contacts and their role in reconfigurable field-effect transistors. Journal of physics. p. . [Online].