Fabrication and Thermoelectrical Power Factor of n-type Si85Ge15 Alloys. Issue 5 (June 2019)

• Record Type: Journal Article
• Authors: Xu, Yadong; Ge, Huichao; Dong, Huiling; Dong, Shufeng
• Is Part Of: Journal of physics. Volume 1213:Issue 5(2019)
• Publication Date: 2019-06
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1213/5/052030
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: N-type Si85Ge15 alloys heavily doped with different dopant over a wide range of dopant have been fabricated by hot isostatic pressing. Influences of the carrier concentration and mobility of heavily doped n-type Si85Ge15 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 31-38μWcm −1 K −2 could be consistently achieved with carrier concentrations of 2.0-3.0 × 10 cm -3 and carrier mobilities of 35-42 cm 2 V -1 s -1, However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are presented.