Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates. (22nd May 2019)

• Record Type: Journal Article
• Authors: Okura, Kazumasa; Takamiya, Kengo; Yagi, Shuhei; Yaguchi, Hiroyuki
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SC(2019)
• Publication Date: 2019-05-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab106a
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, we report on the detailed structural features of step-bunched surface formed on cubic (c-) GaN and self-assembled c-InN dot arrays grown on the c-GaN surface, particularly focusing on the growth temperature dependence. Samples were fabricated on MgO (001) vicinal substrates with off-cut angles of 2.0° and 3.5° toward [110] by RF-MBE. Multisteps and terraces with a certain periodicity in the vicinal direction were observed on c-GaN layers. The average terrace width narrowed with lowering the growth temperature and increasing the substrate off-cut angle. The formation of c-InN dots proceeded in the Stranski–Krastanov growth mode with critical thickness of 0.54–0.66 nm. The c-InN dot exhibited a variety of structural features depending on the growth conditions. Positional dot alignment along the multistep edges of the underlayer was observed under some conditions. The degree of alignment was found to be affected by the terrace width on the c-GaN underlayer.