ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity. (2nd November 2016)

• Record Type: Journal Article
• Authors: Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng
• Is Part Of: Nanotechnology. Volume 27:Number 48(2016)
• Publication Date: 2016-11-02
• Subjects: graphene -- heterostructure -- ultraviolet photodetector; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/48/48LT03
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W −1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W −1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W −1 to 1915 A W −1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.