Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations. (21st August 2017)

• Record Type: Journal Article
• Authors: Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck
• Is Part Of: Nanotechnology. Volume 28:Number 37(2017)
• Publication Date: 2017-08-21
• Subjects: graphene -- transistor -- thermal anneal -- boron nitride -- photoresist; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa8335
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.