Spin-torque-driven MTJs with extended free layer for logic applications. (14th June 2018)

• Record Type: Journal Article
• Authors: Raymenants, Eline; Vaysset, Adrien; Wan, Danny; Swerts, Johan; Van Beek, Simon; Zografos, Odysseas; Nikonov, Dmitri E; Manipatruni, Sasikanth; Young, Ian A; Mocuta, Dan; Radu, Iuliana P; Heyns, Marc; Manfrini, Mauricio
• Is Part Of: Journal of physics. Volume 51:Number 27(2018)
• Publication Date: 2018-06-14
• Subjects: magnetic tunnel junction -- spin torque majority gate -- spin transfer torque -- spin logic -- multilevel switching; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aac609
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The development of low-power spintronic computation would open new paths for advanced logic nodes. It could utilize a ferromagnetic free layer shared by multiple magnetic tunnel junctions to cascade spin-coherent information. The basic component of this device would be a magnetic tunnel junction with an extended free layer. Here, we study the magnetization dynamics of such a system. One or multiple intermediate resistance levels are observed during spin-torque-induced magnetization reversal. Micromagnetic modeling suggests that non-uniform magnetic anisotropy introduced by careful pillar-pattering is a plausible cause of this multi-step reversal.