High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering. (23rd November 2017)

• Record Type: Journal Article
• Authors: Maurya, Sandeep Kumar; Liu, Ya; Xu, Xiaojie; Woods-Robinson, Rachel; Das, Chandan; Ager, Joel W; Balasubramaniam, K R
• Is Part Of: Journal of physics. Volume 50:Number 50(2017)
• Publication Date: 2017-11-23
• Subjects: transparent conductor -- radio frequency magnetron sputtering -- figure of merit -- hole conducting; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa95b3
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: p -type transparent conducting Cu alloyed ZnS thin films from Cu x Zn 1 − x S targets ( x = 0.1, 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM–SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2 S phase. Conductivity values ⩾400 S c m − 1 were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S c m − 1 obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be ⩾75% at 550 nm. The transparent conductor figure of merit ( Φ T C ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was ≈276 μ S .