Cite
HARVARD Citation
Ha, M. et al. (2018). Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition. Applied physics express. p. . [Online].
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Ha, M. et al. (2018). Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition. Applied physics express. p. . [Online].