Cite
HARVARD Citation
Khoury, M. et al. (2018). Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations. Applied physics express. p. . [Online].
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Khoury, M. et al. (2018). Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations. Applied physics express. p. . [Online].