Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes. (14th February 2018)

• Record Type: Journal Article
• Authors: Joishi, Chandan; Rafique, Subrina; Xia, Zhanbo; Han, Lu; Krishnamoorthy, Sriram; Zhang, Yuewei; Lodha, Saurabh; Zhao, Hongping; Rajan, Siddharth
• Is Part Of: Applied physics express. Volume 11:Number 3(2018)
• Publication Date: 2018-02-14
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.031101
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report (010)-oriented β-Ga2 O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of −190 V, and maximum vertical electric fields of 4.2 MV/cm in the center and 5.9 MV/cm at the edge were estimated, with extrinsic R ON of 3.9 mΩ·cm 2 and extracted intrinsic R ON of 0.023 mΩ·cm 2 . The reported results demonstrate the high quality of homoepitaxial LPCVD-grown β-Ga2 O3 thin films for vertical power electronics applications, and show that this growth method is promising for future β-Ga2 O3 technology.