Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes. (11th July 2017)

• Record Type: Journal Article
• Authors: Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime
• Is Part Of: Applied physics express. Volume 10:Number 8(2017)
• Publication Date: 2017-07-11
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.081201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Stacking faults expanded by the application of forward current to 4H-SiC p–i–n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.