Formation of (100)-oriented large polycrystalline silicon thin films with multiline beam continuous-wave laser lateral crystallization. (15th February 2018)

• Record Type: Journal Article
• Authors: Nguyen, Thi Thuy; Hiraiwa, Mitsuhisa; Koganezawa, Tomoyuki; Yasuno, Satoshi; Kuroki, Shin-Ichiro
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 3(2018)
• Publication Date: 2018-02-15
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.031302
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Low-temperature crystallization to (100)-oriented polycrystalline silicon (poly-Si) thin films is a key requirement for high-performance low-temperature poly-Si thin-film transistors (LTPS-TFTs). Biaxially (100)-oriented poly-Si thin films were formed by multiline beam continuous-wave laser lateral crystallization in single scans. By overlapping scanning, the (100) preferential orientation was stable and (100) silicon crystals were developed over a large area. The crystallinities of the poly-Si films were precisely characterized, especially by two-dimensional X-ray diffraction. It was found that the poly-Si thin films predominantly had (100)-surface-oriented crystals. The crystallinity of the laser-crystallized poly-Si films was dependent on the scanning speed and overlapping condition. The (100) poly-Si films were formed at scanning speeds below the threshold for lateral-crystallized silicon.