Observation of self-assisted GaAs nanowire growth by molecular beam epitaxy on GaAs (1 1 1)B without SiO2 layer. (15th September 2017)

• Record Type: Journal Article
• Authors: Vorathamrong, Samatcha; Panyakeow, Somsak; Ratanathammaphan, Somchai; Praserthdam, Piyasan; Tongyam, Chiraporn
• Is Part Of: Materials research express. Volume 4:Number 9(2017)
• Publication Date: 2017-09-15
• Subjects: nanowire -- GaAs -- VLS -- RHEED -- growth evolution -- GaAs substrate -- without SiO2; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/aa88fc
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: GaAs nanowire growth was performed on bare GaAs (1 1 1)B substrates by molecular beam epitaxy technique. A small adjustment was made to the conventional self-assisted VLS growth by removing covered SiO2 layer and growing nanowires directly on the substrate surface in order to eliminate some issues that occur in the conventional self-assisted VLS growth. To study the growth mechanism, growth time was varied as a growth parameter. Nanowire crystal structure was investigated by XRD analysis. Evolution of surface morphology along with RHEED patterns were utilized to determine characteristics of the growth.