Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage. (24th July 2017)

• Record Type: Journal Article
• Authors: Amjadipour, Mojtaba; MacLeod, Jennifer; Lipton-Duffin, Josh; Iacopi, Francesca; Motta, Nunzio
• Is Part Of: Nanotechnology. Volume 28:Number 34(2017)
• Publication Date: 2017-07-24
• Subjects: graphene -- SiC -- epitaxy -- focused ion beam -- patterning; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa752e
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga + beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.