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HARVARD Citation
Ramesh, C. et al. (2018). Effect of HfO2 nitridation on structural, optical and electrical properties of GaN films grown on HfO2/Si(100) by laser molecular beam epitaxy. Materials research express. p. . [Online].
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Ramesh, C. et al. (2018). Effect of HfO2 nitridation on structural, optical and electrical properties of GaN films grown on HfO2/Si(100) by laser molecular beam epitaxy. Materials research express. p. . [Online].