80 GHz AlGaInAs/InP colliding-pulse mode-locked laser with high pulse power. (7th November 2016)

• Record Type: Journal Article
• Authors: Zhao, Pengchao; Liu, Anjin; Zheng, Wanhua
• Is Part Of: Applied physics express. Volume 9:Number 12(2016:Dec.)
• Publication Date: 2016-11-07
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.122701
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We theoretically analyze the impact of a saturable absorber (SA) length on the pulse power of a semiconductor mode-locked laser and find that in the range of the SA length from 1.5 to 7%, a laser with a longer SA can generate pulses with a higher power. Based on the simulation, we demonstrate a colliding-pulse mode-locked laser with an 80 µm SA. The device generates pulses at 80 GHz, with a pulse width of 1.75 ps, peak power of 188 mW, pulse energy of 0.33 pJ, and time–bandwidth product of 0.51. The results provide new possibilities for the design of high-repetition frequency high-pulse power mode-locked lasers.