Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications. (7th April 2017)

• Record Type: Journal Article
• Authors: He, Zifang; Chen, Shiyu; Wu, Weihua; Zhai, Jiwei; Song, Sannian; Song, Zhitang
• Is Part Of: Applied physics express. Volume 10:Number 5(2017)
• Publication Date: 2017-04-07
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.055504
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Multilayer SnSb4 /ZnSb (SS/ZS) thin films have been investigated for phase change applications. The composition [SS (4 nm)/ZS (10 nm)]4 exhibits a high crystallization temperature ( T c ∼ 230 °C), high data retention temperature for 10 years ( T 10-yr ∼ 152 °C), small density change, and low thermal conductivity. A cell based on [SS (4 nm)/ZS (10 nm)]4 achieves fast SET/RESET switching speed (∼10 ns) and low reset power consumption (the energy for RESET operation = 9.6 × 10 −13 J).