Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization. (12th December 2016)

• Record Type: Journal Article
• Authors: Berg, Nora G; Franke, Alexander; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena
• Is Part Of: Materials research express. Volume 3:Number 12(2016)
• Publication Date: 2016-12-12
• Subjects: gallium nitride -- biomolecule -- photoluminescence; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/3/12/125906
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The photoluminescence changes of a III-Nitride semiconductor with various surface topographies were studied after chemical functionalization. Al x Ga1− x N with a composition of 70% aluminum was used and the surfaces were functionalized with a fluorophore dye-terminated peptide using a linker molecule. The stability of the wafers in water was studied using inductively coupled plasma mass spectrometry prior to modifying the material. The leaching data demonstrated that the AlGaN material in highly stable in biological conditions over 7 d. The attachment of the dye to the wafer was investigated using x-ray photoelectron spectroscopy and photoluminescence spectroscopy (PL). The PL spectrum showed a clear signature of the dye with a pronounced emission peak at approximately 260 nm, indicating a successful attachment to the surface.