Localized phase change of VO2 films grown by atomic-layer deposition on InAlN/AlN/GaN heterostructures. (17th May 2017)

• Record Type: Journal Article
• Authors: Downey, Brian P.; Wheeler, Virginia D.; Meyer, David J.
• Is Part Of: Applied physics express. Volume 10:Number 6(2017)
• Publication Date: 2017-05-17
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.061101
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrate the thermally actuated phase change of VO2 films formed by atomic layer deposition and subsequent thermal annealing on InAlN/AlN/GaN heterostructures. To locally raise the device temperature above the VO2 semiconductor–metal transition temperature, a two-dimensional electron gas formed within the InAlN/AlN/GaN heterostructure was used as an integrated resistive heater. An ON/OFF resistance ratio of nearly 10 3 was achieved for 50 nm VO2 films over a temperature range of 25 to 105 °C. The time required to switch the VO2 film from high- to low-resistance states was shown to depend on the applied heater power, with sub-microsecond transition times achieved.