Excellent thermal stability owing to Ge and C doping in Sb2Te-based high-speed phase-change memory. (22nd October 2018)

• Record Type: Journal Article
• Authors: Guo, Tianqi; Song, Sannian; Zheng, Yonghui; Xue, Yuan; Yan, Shuai; Liu, Yuxiang; Li, Tao; Liu, Guangyu; Wang, Yong; Song, Zhitang; Qi, Ming; Feng, Songlin
• Is Part Of: Nanotechnology. Volume 29:Number 50(2018)
• Publication Date: 2018-10-22
• Subjects: phase-change memory -- data retention -- transition speed -- Sb2Te -- doping; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aae4f4
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The contradictory nature between transition speed and thermal stability of phase-change materials has always been the key limitation to the achievement of wide applications under harsh conditions. Ge2.3 Sb2.0 Te phase-change alloy is proposed here to feature high thermal stability (10 year data retention above 220 °C) and fast switching speed (SET programming speed up to 5 ns) for electronic storage. In mushroom-shaped device cells, the nanocomposite materials implement an endurance life of nearly 1 × 10 5 cycles. Such operation speed among high-temperature alloys is the best ever reported. And the moderate incorporation of C offers intriguing benefits that include enhanced thermal stability and reduced RESET voltage in the above-mentioned Ge-rich Sb2 Te-based memory cells. Through microscopic analysis, the local segregation of C dopants can further refine the crystalline grains and thus induce a lower volume change and roughness upon heating. These properties are crucial with regard to the application potential in high-performance and high-density embedded memories.