Multi-level switching in TiOxFy film with nanoparticles. (30th August 2017)

• Record Type: Journal Article
• Authors: Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Du, Nan; Schmidt, Heidemarie
• Is Part Of: Journal of physics. Volume 50:Number 38(2017)
• Publication Date: 2017-08-30
• Subjects: multi-level switching -- resistance control -- meshy conducting path -- Schottky barrier; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa7fae
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: A reliable bipolar resistive switching device was achieved with multi-level switching behavior in fluorine-doped titanium oxide (TiO x F y ) film. Different resistance states can be precisely controlled by different pulse voltages, which reveals the device's high potential in neuromorphic research. The characteristics of I – V curves in each resistance state were analyzed. Nanoparticles were observed in the TiO x F y film by HR-TEM. The underlying physical mechanisms during resistance switching are discussed and a model of a meshy conducting path is proposed.