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HARVARD Citation
Akyol, F. et al. (2017). Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. Applied physics express. p. . [Online].
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Akyol, F. et al. (2017). Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. Applied physics express. p. . [Online].