Cite
HARVARD Citation
Johar, M. et al. (2017). Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer. Journal of physics. p. . [Online].
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Johar, M. et al. (2017). Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer. Journal of physics. p. . [Online].