Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering. (31st January 2018)

• Record Type: Journal Article
• Authors: Shiratori, Yuta; Zulkifly, Faris Akira Bin Mohd; Nakada, Kazuyoshi; Miyajima, Shinsuke
• Is Part Of: Applied physics express. Volume 11:Number 3(2018)
• Publication Date: 2018-01-31
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.031301
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrated the deposition of high-quality intrinsic hydrogenated amorphous silicon (i-a-Si:H) passivation layers for silicon heterojunction (SHJ) solar cells by facing target sputtering (FTS). The RF power of FTS significantly affects the electrical properties of i-a-Si:H and the passivation quality at the i-a-Si:H/crystalline silicon interface. A low surface recombination velocity of 7.0 cm/s and a relatively high deposition rate of 4.0 nm/min were simultaneously achieved at the optimum RF power. This result indicates the potential of FTS as a SiH4 -free fabrication process of SHJ solar cells.