Interface charge behaviors of BaTiO3 film heterostructures with various crystal orientations. (12th January 2017)

• Record Type: Journal Article
• Authors: Zhang, Wei; Ouyang, Jun; Cheng, Hongbo; Yang, Qian; Kang, Limin; Zhang, Hua; Hu, Fangren
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 2(2017)
• Publication Date: 2017-01-12
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.020304
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Heteroepitaxial BaTiO3 ferroelectric films with (001), (110), and (111) orientations were grown on SrRuO3 -buffered SrTiO3 substrates by magnetron sputtering. The leakage current and interface charge behaviors were systematically investigated. Without a discernible orientation-dependence behavior, the leakage current behaviors were all well described by a modified Schottky-contact model. On the basis of this theory, the interface charge state parameters, including dynamic dielectric constant, potential barriers, depletion layer width, effective space-charge density and hole concentration, and their evolution behaviors were analyzed in detail. They all exhibited anisotropic characteristics and were proved to be essentially attributed to the macrophysical properties of BaTiO3 film heterostructures.